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64-0545-31　［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor　FDB52N20TM

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1set(800pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:52 A
  • Maximum Drain Source Voltage:200 V
  • Maximum Drain Source Resistance:49 mΩ
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:357 W
  • Typical Turn-Off Delay Time:48 ns
  • CODE No.:166-2543
  •  
Order No. 64-0545-31
Model No. FDB52N20TM
Standard price JPY: 225,000 USD: 1,410.39
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(800pieces)
  Discontinued
Stock in Japan -

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