64-0545-28 [Discontinued]FDB33N25TM N-Channel MOSFET, 33 A, 250 V UniFET, 3-Pin D2PAK ON Semiconductor FDB33N25TM
Features
- UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
Spec
- Quantity:1set(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:33 A
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:94 mΩ
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:235 W
- Typical Turn-Off Delay Time:75 ns
- CODE No.:166-2437
| Order No. | 64-0545-28 | |
|---|---|---|
| Model No. | FDB33N25TM | |
| Standard price |
JPY: 198,000
USD: 1,241.15
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(800pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDB33N25TM N-Channel MOSFET, 33 A, 250 V UniFET, 3-Pin D2PAK ON Semiconductor FDB33N25TM](https://aimg.as-1.co.jp/c/64/0545/28/64054528.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)