64-0523-32 ［Discontinued］IPB038N12N3GATMA1 N-Channel MOSFET, 120 A, 120 V OptiMOS 3, 3-Pin D2PAK Infineon IPB038N12N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:120 V
- Maximum Drain Source Resistance:4.1 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:300 W
- Transistor Material:Si
- CODE No.:754-5437
| Order No. | 64-0523-32 | |
|---|---|---|
| Model No. | IPB038N12N3GATMA1 | |
| Standard price |
JPY: 680
USD: 4.26
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |