Infineon

64-0523-28 Infineon IGW75N60TFKSA1 IGBT, 150 A 600 V, 3-Pin TO-247 IGW75N60TFKSA1

Features

  • Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C

Spec

  • Quantity:1set(30pieces)
  • Maximum Continuous Collector Current:150 A
  • Maximum Collector Emitter Voltage:600 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:428 W
  • Package Type:TO-247
  • Mounting Type:Through Hole
  • Pin Count:3
  • Transistor Configuration:Single
  • Length:16.13mm
  • Width:21.1mm
  • Height:5.21mm
  • Dimensions:16.13 x 21.1 x 5.21mm
  • Minimum Operating Temperature:-40 °C
  • CODE No.:165-6737
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Order No. 64-0523-28
Model No. IGW75N60TFKSA1
Standard price JPY: 18,600 USD: 116.59
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(30pieces)
Stock in Japan
Supplier Stock