Features

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

Quantity:1bag(2pieces)

Channel Type:N

Maximum Continuous Drain Current:100 A

Maximum Drain Source Voltage:60 V

Maximum Drain Source Resistance:3.1 mΩ

Maximum Gate Threshold Voltage:4V

Minimum Gate Threshold Voltage:2V

Maximum Gate Source Voltage:-20 V, +20 V

Package Type:TDSON

Mounting Type:Surface Mount

Pin Count:8

Channel Mode:Enhancement

Maximum Power Dissipation:139 W

Number of Elements per Chip:1

CODE No.:754-5257

Order No.

64-0523-16

Model No.

BSC031N06NS3GATMA1

Standard price

JPY: 400 USD: 2.51

Excange rate 1USD= 159.53JPY
Valid price in Japan

Quantity

1bag(2pieces)

Stock in Japan

Infineon

64-0523-16　［Discontinued］BSC031N06NS3GATMA1 N-Channel MOSFET, 100 A, 60 V OptiMOS 3, 8-Pin TDSON Infineon　BSC031N06NS3GATMA1

印刷

特徴

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

仕様

Quantity:1bag(2pieces)
Channel Type:N
Maximum Continuous Drain Current:100 A
Maximum Drain Source Voltage:60 V
Maximum Drain Source Resistance:3.1 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:TDSON
Mounting Type:Surface Mount
Pin Count:8
Channel Mode:Enhancement
Maximum Power Dissipation:139 W
Number of Elements per Chip:1
CODE No.:754-5257

アズワン品番	64-0523-16
型番	BSC031N06NS3GATMA1
標準価格	JPY: 400 USD: 2.51 Excange rate 1USD= 159.53JPY Valid price in Japan
入り数	1bag(2pieces)

在庫数	-