64-0519-10 ［Discontinued］SPP21N50C3HKSA1 N-Channel MOSFET, 21 A, 560 V CoolMOS C3, 3-Pin TO-220 Infineon SPP21N50C3HKSA1
Features
- Infineon CoolMOS™C3 Power MOSFET
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:21 A
- Maximum Drain Source Voltage:560 V
- Maximum Drain Source Resistance:190 mΩ
- Maximum Gate Threshold Voltage:3.9V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:208 W
- Dimensions:10.36 x 4.57 x 9.45mm
- CODE No.:753-3207
| Order No. | 64-0519-10 | |
|---|---|---|
| Model No. | SPP21N50C3HKSA1 | |
| Standard price |
JPY: 730
USD: 4.54
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |