64-0519-06 [Discontinued]SPD03N50C3BTMA1 N-Channel MOSFET, 3.2 A, 560 V CoolMOS C3, 3-Pin DPAK Infineon SPD03N50C3BTMA1
Features
- Infineon CoolMOS™C3 Power MOSFET
Spec
- Quantity:1set(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.2 A
- Maximum Drain Source Voltage:560 V
- Maximum Drain Source Resistance:1.4 Ω
- Maximum Gate Threshold Voltage:3.9V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:38 W
- Maximum Operating Temperature:+150 °C
- CODE No.:753-3175
| Order No. | 64-0519-06 | |
|---|---|---|
| Model No. | SPD03N50C3BTMA1 | |
| Standard price |
JPY: 720
USD: 4.48
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SPD03N50C3BTMA1 N-Channel MOSFET, 3.2 A, 560 V CoolMOS C3, 3-Pin DPAK Infineon SPD03N50C3BTMA1](https://aimg.as-1.co.jp/c/64/0519/06/64051905.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)