64-0519-03 ［Discontinued］SPB18P06PGATMA1 P-Channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin D2PAK Infineon SPB18P06PGATMA1
Features
- Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant
Spec
- Quantity:1set(1000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:18.6 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:130 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:81.1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-6651
| Order No. | 64-0519-03 | |
|---|---|---|
| Model No. | SPB18P06PGATMA1 | |
| Standard price |
JPY: 68,600
USD: 426.83
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |