64-0518-86 [Discontinued]IPP60R099CPXKSA1 N-Channel MOSFET, 31 A, 650 V CoolMOS CP, 3-Pin TO-220 Infineon IPP60R099CPXKSA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:99 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:255 W
- Typical Turn-Off Delay Time:60 ns
- CODE No.:753-3046
| Order No. | 64-0518-86 | |
|---|---|---|
| Model No. | IPP60R099CPXKSA1 | |
| Standard price |
JPY: 860
USD: 5.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]IPP60R099CPXKSA1 N-Channel MOSFET, 31 A, 650 V CoolMOS CP, 3-Pin TO-220 Infineon IPP60R099CPXKSA1](https://aimg.as-1.co.jp/c/64/0518/86/64051886.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)