64-0518-80 ［Discontinued］IPD60R950C6ATMA1 N-Channel MOSFET, 4.4 A, 650 V CoolMOS C6, 3-Pin DPAK Infineon IPD60R950C6ATMA1
Features
- Infineon CoolMOS™C6/C7 Power MOSFET
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:4.4 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:950 mΩ
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:37 W
- Series:CoolMOS C6
- CODE No.:753-3015
| Order No. | 64-0518-80 | |
|---|---|---|
| Model No. | IPD60R950C6ATMA1 | |
| Standard price |
JPY: 660
USD: 4.14
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |