64-0518-77 [Discontinued]IPB60R190C6ATMA1 N-Channel MOSFET, 20 A, 650 V CoolMOS C6, 3-Pin D2PAK Infineon IPB60R190C6ATMA1
Features
- Infineon CoolMOS™C6/C7 Power MOSFET
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:20 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:190 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:151 W
- Typical Turn-Off Delay Time:110 ns
- CODE No.:753-3005
| Order No. | 64-0518-77 | |
|---|---|---|
| Model No. | IPB60R190C6ATMA1 | |
| Standard price |
JPY: 340
USD: 2.13
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]IPB60R190C6ATMA1 N-Channel MOSFET, 20 A, 650 V CoolMOS C6, 3-Pin D2PAK Infineon IPB60R190C6ATMA1](https://aimg.as-1.co.jp/c/64/0518/77/64051877.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)