64-0518-76 ［Discontinued］IPB60R099CPATMA1 N-Channel MOSFET, 31 A, 650 V CoolMOS CP, 3-Pin D2PAK Infineon IPB60R099CPATMA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:99 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:255 W
- Maximum Operating Temperature:+150 °C
- CODE No.:753-2999
| Order No. | 64-0518-76 | |
|---|---|---|
| Model No. | IPB60R099CPATMA1 | |
| Standard price |
JPY: 860
USD: 5.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
||
| Stock in Japan | - | |