64-0518-64 BSS126H6327XTSA2 N-Channel MOSFET, 21 mA, 600 V Depletion SIPMOS, 3-Pin SOT-23 Infineon BSS126H6327XTSA2
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:21 mA
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:700 Ω
- Maximum Gate Threshold Voltage:1.6V
- Minimum Gate Threshold Voltage:2.7V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Depletion
- Category:Small Signal
- Maximum Power Dissipation:500 mW
- Transistor Material:Si
- CODE No.:911-4971
| Order No. | 64-0518-64 | |
|---|---|---|
| Model No. | BSS126H6327XTSA2 | |
| Standard price |
JPY: 85,300
USD: 534.70
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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