64-0518-61 ［Discontinued］BSO615NGHUMA1 Dual N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 8-Pin SOIC Infineon BSO615NGHUMA1
Features
- Infineon SIPMOS® Dual N-Channel MOSFET
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.6 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:150 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:2 W
- Number of Elements per Chip:2
- CODE No.:753-2797
| Order No. | 64-0518-61 | |
|---|---|---|
| Model No. | BSO615NGHUMA1 | |
| Standard price |
JPY: 570
USD: 3.55
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |