64-0518-60 ［Discontinued］BSC080P03LSGAUMA1 P-Channel MOSFET, 30 A, 30 V OptiMOS P, 8-Pin TDSON Infineon BSC080P03LSGAUMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity:1bag(2pieces)
- Channel Type:P
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:8 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:2.2V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:TDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Dimensions:6.35 x 5.35 x 1.1mm
- CODE No.:753-2787
| Order No. | 64-0518-60 | |
|---|---|---|
| Model No. | BSC080P03LSGAUMA1 | |
| Standard price |
JPY: 460
USD: 2.88
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
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| Stock in Japan | - | |