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Infineon

64-0516-68　［Discontinued］SPD18P06PGBTMA1 P-Channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin DPAK Infineon　SPD18P06PGBTMA1

特徴

  • Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant

仕様

  • Quantity:1bag(5pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:18.6 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:130 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2.1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:80 W
  • Typical Turn-Off Delay Time:24.5 ns
  • CODE No.:752-8491
  •  
アズワン品番 64-0516-68
型番 SPD18P06PGBTMA1
標準価格 JPY: 660 USD: 4.14
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1bag(5pieces)
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在庫数 -

[$1]［Discontinued］SPD18P06PGBTMA1 P-Channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin DPAK Infineon[/$1]