64-0516-65 ［Discontinued］SPB11N60C3ATMA1 N-Channel MOSFET, 11 A, 650 V CoolMOS C3, 3-Pin D2PAK Infineon SPB11N60C3ATMA1
Features
- Infineon CoolMOS™C3 Power MOSFET
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:11 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:380 mΩ
- Maximum Gate Threshold Voltage:3.9V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Series:CoolMOS C3
- CODE No.:752-8473
| Order No. | 64-0516-65 | |
|---|---|---|
| Model No. | SPB11N60C3ATMA1 | |
| Standard price |
JPY: 360
USD: 2.26
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |