64-0516-52 IPB320N20N3GATMA1 N-Channel MOSFET, 34 A, 200 V OptiMOS 3, 3-Pin D2PAK Infineon IPB320N20N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:34 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:32 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:136 W
- Typical Turn-Off Delay Time:21 ns
- CODE No.:752-8344
| Order No. | 64-0516-52 | |
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| Model No. | IPB320N20N3GATMA1 | |
| Standard price |
JPY: 780
USD: 4.89
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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