64-0516-42 ［Discontinued］BSC120N03LSGATMA1 N-Channel MOSFET Transistor, 39 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon BSC120N03LSGATMA1
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［Discontinued］BSC120N03LSGATMA1 N-Channel MOSFET Transistor, 39 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon BSC120N03LSGATMA1 64-0516-42 【AXEL GLOBAL】ASONE Contact us
Infineon 64-0516-42 ［Discontinued］BSC120N03LSGATMA1 N-Channel MOSFET Transistor, 39 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon BSC120N03LSGATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Spec
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:39 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:16.5 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TDSON
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Minimum Operating Temperature:-55 °C
- CODE No.:911-4852
Order No. 64-0516-42 Model No. BSC120N03LSGATMA1 Standard price JPY: 150,000 USD: 940.91 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1set(5000pieces) 
Stock in Japan - -
