64-0512-16 [Discontinued]ZXMC6A09DN8TA Dual N/P-Channel MOSFET, 4.8 A, 5.1 A, 60 V, 8-Pin SOIC Diodes Inc ZXMC6A09DN8TA
Features
- Dual N/P-Channel MOSFET, Diodes Inc.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:4.8 A, 5.1 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:70 mΩ, 80 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Typical Turn-Off Delay Time:28.5 ns, 55 ns
- CODE No.:751-5338
| Order No. | 64-0512-16 | |
|---|---|---|
| Model No. | ZXMC6A09DN8TA | |
| Standard price |
JPY: 1,070
USD: 6.71
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]ZXMC6A09DN8TA Dual N/P-Channel MOSFET, 4.8 A, 5.1 A, 60 V, 8-Pin SOIC Diodes Inc ZXMC6A09DN8TA](https://aimg.as-1.co.jp/c/64/0512/16/64051215.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)