64-0461-63 [Discontinued]FDG6322C Dual N/P-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 (SC-70) ON Semiconductor FDG6322C
Features
- Enhancement Mode Dual MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:220 mA, 410 mA
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:1.9 Ω, 7 Ω
- Minimum Gate Threshold Voltage:0.65V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-363 (SC-70)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:300 mW
- Number of Elements per Chip:2
- CODE No.:739-0183
| Order No. | 64-0461-63 | |
|---|---|---|
| Model No. | FDG6322C | |
| Standard price |
JPY: 460
USD: 2.88
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDG6322C Dual N/P-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 (SC-70) ON Semiconductor FDG6322C](https://aimg.as-1.co.jp/c/64/0461/63/64046162.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)