64-0357-21 STQ1HNK60R-AP N-Channel MOSFET, 400 mA, 600 V MDmesh, SuperMESH, 3-Pin TO-92 STMicroelectronics STQ1HNK60R-AP
Features
- N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
Spec
- Quantity:1bag(2000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:400 mA
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:8.5 Ω
- Maximum Gate Threshold Voltage:3.7V
- Minimum Gate Threshold Voltage:2.25V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-92
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3 W
- Dimensions:4.95 x 3.94 x 4.95mm
- CODE No.:168-6849
| Order No. | 64-0357-21 | |
|---|---|---|
| Model No. | STQ1HNK60R-AP | |
| Standard price |
JPY: 101,000
USD: 628.42
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(2000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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