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Listed products : 3 milion productsListed products : 3 milion products"init"> 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
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  • 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
IXYS

64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3

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  • IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

SpecSpec class="init"> 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
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すべてのカテゴリ
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Quote Other Requests
  • AXEL GLOBAL
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  • 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
  • AXEL GLOBAL
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  • 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
IXYS

64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3

  • 印刷
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  • IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3

特徴

  • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

仕様

  • Quantity:1piece/bag
  • Channel Type:N
  • Maximum Continuous Drain Current:64 A
  • Maximum Drain Source Voltage:500 V
  • Maximum Drain Source Resistance:85 mΩ
  • Maximum Gate Threshold Voltage:6.5V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:PLUS247
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:1 kW
  • Number of Elements per Chip:1
  • CODE No.:801-1503
  •  
Order No. 64-0346-25
型番 IXFX64N50Q3
標準価格 JPY: 5,170 USD: 32.17
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1piece/bag
Stock in Japan
Supplier Stock

This page is the page of IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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  • For Re-sellerFor Re-seller> 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
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    • 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
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    • 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
    IXYS

    64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3

    • 印刷
    • PDF
    • IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3

    特徴

    • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

    仕様

    • Quantity:1piece/bag
    • Channel Type:N
    • Maximum Continuous Drain Current:64 A
    • Maximum Drain Source Voltage:500 V
    • Maximum Drain Source Resistance:85 mΩ
    • Maximum Gate Threshold Voltage:6.5V
    • Maximum Gate Source Voltage:-30 V, +30 V
    • Package Type:PLUS247
    • Mounting Type:Through Hole
    • Pin Count:3
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:1 kW
    • Number of Elements per Chip:1
    • CODE No.:801-1503
    •  
    アズワン品番 64-0346-25
    型番 IXFX64N50Q3
    標準価格 JPY: 5,170 USD: 32.17
    Excange rate 1USD= 160.72JPY
    Valid price in Japan
    入り数 1piece/bag
    在庫数
    サプライヤ在庫

    [$1]IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS[/$1]

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    • For End-UserASONEs="init"> 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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      Listed products : 3 milion products
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      All Categories
      Contact us
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      • AXEL GLOBAL
      • Categories
      • Lab Instruments & Supplies
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      • Discrete Semiconductors
      • 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
      • AXEL GLOBAL
      • Categories
      • Lab Instruments & Supplies
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      • RS Components
      • 64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
      IXYS

      64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3

      • Print
      • PDF
      • IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3

      Features

      • N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

      Spec

      • Quantity:1piece/bag
      • Channel Type:N
      • Maximum Continuous Drain Current:64 A
      • Maximum Drain Source Voltage:500 V
      • Maximum Drain Source Resistance:85 mΩ
      • Maximum Gate Threshold Voltage:6.5V
      • Maximum Gate Source Voltage:-30 V, +30 V
      • Package Type:PLUS247
      • Mounting Type:Through Hole
      • Pin Count:3
      • Channel Mode:Enhancement
      • Category:Power MOSFET
      • Maximum Power Dissipation:1 kW
      • Number of Elements per Chip:1
      • CODE No.:801-1503
      •  
      Order No. 64-0346-25
      Model No. IXFX64N50Q3
      Standard price JPY: 5,170 USD: 32.17
      Excange rate 1USD= 160.72JPY
      Valid price in Japan
      Quantity 1piece/bag
      Stock in Japan
      Supplier Stock

      This page is the page of IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

      Explore AXEL

      • Categories
      • Catalogs
      • Brands

      How to use

      • User’s Guide
      • For Re-seller
      • For End-User

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