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AXEL GLOBALListed products : 3 milion products"init">
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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Specially Ordered Item
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
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すべてのカテゴリ
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Lab Instruments & Supplies
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AXEL GLOBAL
Categories
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
AXEL GLOBAL
Categories
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
IXYS
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
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Features
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density
Spec
Quantity:1piece/bag
Channel Type:N
Maximum Continuous Drain Current:64 A
Maximum Drain Source Voltage:500 V
Maximum Drain Source Resistance:85 mΩ
Maximum Gate Threshold Voltage:6.5V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:PLUS247
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:1 kW
Number of Elements per Chip:1
CODE No.:801-1503
Order No.
64-0346-25
Model No.
IXFX64N50Q3
Standard price
JPY:
6,070
USD:
38.05
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity
1piece/bag
Stock in JapanStock in Japanass="init">
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
Education, Learning Supplies
Specially Ordered Item
Contact us
Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
IXYS
64-0346-25 IXFX64N50Q3 N-Channel MOSFET, 64 A, 500 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS IXFX64N50Q3
印刷
PDF
特徴
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density
仕様
Quantity:1piece/bag
Channel Type:N
Maximum Continuous Drain Current:64 A
Maximum Drain Source Voltage:500 V
Maximum Drain Source Resistance:85 mΩ
Maximum Gate Threshold Voltage:6.5V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:PLUS247
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:1 kW
Number of Elements per Chip:1
CODE No.:801-1503
アズワン品番
64-0346-25
型番
IXFX64N50Q3
標準価格
JPY:
6,070
USD:
38.05
Excange rate 1USD= 159.53JPY
Valid price in Japan
入り数
1piece/bag
在庫数
Supplier Stock
Quote
Other Requests
