IXYS

64-0346-15　IXFX32N80Q3 N-Channel MOSFET, 32 A, 800 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS　IXFX32N80Q3

Features

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

Spec

Quantity:1bag(30pieces)
Channel Type:N
Maximum Continuous Drain Current:32 A
Maximum Drain Source Voltage:800 V
Maximum Drain Source Resistance:270 mΩ
Maximum Gate Threshold Voltage:6V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:PLUS247
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:1 kW
Minimum Operating Temperature:-55 °C
CODE No.:168-4717

Order No.Order No.ss="init"> 64-0346-15 IXFX32N80Q3 N-Channel MOSFET, 32 A, 800 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS　IXFX32N80Q3 【AXEL GLOBAL】 アズワン

取扱点数300万点

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IXYS

64-0346-15　IXFX32N80Q3 N-Channel MOSFET, 32 A, 800 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS　IXFX32N80Q3

印刷

特徴

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

仕様

Quantity:1bag(30pieces)
Channel Type:N
Maximum Continuous Drain Current:32 A
Maximum Drain Source Voltage:800 V
Maximum Drain Source Resistance:270 mΩ
Maximum Gate Threshold Voltage:6V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:PLUS247
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:1 kW
Minimum Operating Temperature:-55 °C
CODE No.:168-4717

アズワン品番	64-0346-15
Model No.	IXFX32N80Q3
Standard price	JPY: 132,000 USD: 827.43 Excange rate 1USD= 159.53JPY Valid price in Japan
Quantity	1bag(30pieces)
Stock in Japan
Supplier Stock

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How to useHow to useit"> 64-0346-15 IXFX32N80Q3 N-Channel MOSFET, 32 A, 800 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS　IXFX32N80Q3 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

IXYS

64-0346-15　IXFX32N80Q3 N-Channel MOSFET, 32 A, 800 V HiperFET, Q3-Class, 3-Pin PLUS247 IXYS　IXFX32N80Q3

印刷

特徴

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

仕様

Quantity:1bag(30pieces)
Channel Type:N
Maximum Continuous Drain Current:32 A
Maximum Drain Source Voltage:800 V
Maximum Drain Source Resistance:270 mΩ
Maximum Gate Threshold Voltage:6V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:PLUS247
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:1 kW
Minimum Operating Temperature:-55 °C
CODE No.:168-4717

アズワン品番	64-0346-15
型番	IXFX32N80Q3
標準価格	JPY: 132,000 USD: 827.43 Excange rate 1USD= 159.53JPY Valid price in Japan
入り数	1bag(30pieces)
在庫数
サプライヤ在庫

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