64-0346-14 IXFK27N80Q N-Channel MOSFET, 27 A, 800 V HiperFET, Q-Class, 3-Pin TO-264AA IXYS IXFK27N80Q
Features
- N-channel Power MOSFET, IXYS HiperFET™ Q Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
Spec
- Quantity:1piece/bag
- Channel Type:N
- Maximum Continuous Drain Current:27 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:320 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-264AA
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:500 W
- Number of Elements per Chip:1
- CODE No.:711-5382
| Order No. | 64-0346-14 | |
|---|---|---|
| Model No. | IXFK27N80Q | |
| Standard price |
JPY: 6,320
USD: 39.62
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece/bag | |
| Stock in Japan |
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| Supplier Stock |
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