64-0346-13 IXFK26N120P N-Channel MOSFET, 26 A, 1200 V HiperFET, Polar, 3-Pin TO-264 IXYS IXFK26N120P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1piece/bag
- Channel Type:N
- Maximum Continuous Drain Current:26 A
- Maximum Drain Source Voltage:1200 V
- Maximum Drain Source Resistance:460 mΩ
- Maximum Gate Threshold Voltage:6.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-264
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:960 W
- Number of Elements per Chip:1
- CODE No.:711-5360
| Order No. | 64-0346-13 | |
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| Model No. | IXFK26N120P | |
| Standard price |
JPY: 7,840
USD: 48.78
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece/bag | |
| Stock in Japan |
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| Supplier Stock |
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