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IXYS

64-0346-12　IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264　IXYB82N120C3H1

FeaturesFeatures class="init"> 64-0346-12 IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264　IXYB82N120C3H1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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IXYS

64-0346-12　IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264　IXYB82N120C3H1

特徴

  • IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat) Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage Short circuit capability for 10usec Positive on-state voltage temperature coefficient Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes International standard and proprietary high voltage packages

Spec

  • Quantity:1piece/bag
  • Maximum Continuous Collector Current:164 A
  • Maximum Collector Emitter Voltage:1200 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:1.04 kW
  • Package Type:PLUS264
  • Mounting Type:Through Hole
  • Channel Type:N
  • Pin Count:3
  • Switching Speed:50kHz
  • Transistor Configuration:Single
  • Length:20.29mm
  • Width:5.31mm
  • Height:26.59mm
  • Dimensions:20.29 x 5.31 x 26.59mm
  • Maximum Operating Temperature:+150 °C
  • CODE No.:808-0237
  •  
Order No. 64-0346-12
Model No. IXYB82N120C3H1
Standard price JPY: 4,740 USD: 29.73
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init"> 64-0346-12 IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264　IXYB82N120C3H1 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
IXYS

64-0346-12　IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264　IXYB82N120C3H1

特徴

  • IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat) Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage Short circuit capability for 10usec Positive on-state voltage temperature coefficient Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes International standard and proprietary high voltage packages

仕様

  • Quantity:1piece/bag
  • Maximum Continuous Collector Current:164 A
  • Maximum Collector Emitter Voltage:1200 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:1.04 kW
  • Package Type:PLUS264
  • Mounting Type:Through Hole
  • Channel Type:N
  • Pin Count:3
  • Switching Speed:50kHz
  • Transistor Configuration:Single
  • Length:20.29mm
  • Width:5.31mm
  • Height:26.59mm
  • Dimensions:20.29 x 5.31 x 26.59mm
  • Maximum Operating Temperature:+150 °C
  • CODE No.:808-0237
  •  
アズワン品番 64-0346-12
型番 IXYB82N120C3H1
標準価格 JPY: 4,740 USD: 29.73
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1piece/bag
在庫数
Supplier Stock

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