64-0346-10 IXFB110N60P3 N-Channel MOSFET, 110 A, 600 V HiperFET, Polar3, 3-Pin PLUS264 IXYS IXFB110N60P3
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
Spec
- Quantity:1piece/bag
- Channel Type:N
- Maximum Continuous Drain Current:110 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:56 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:PLUS264
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.89 kW
- Number of Elements per Chip:1
- CODE No.:802-4344
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64-0346-10 IXFB110N60P3 N-Channel MOSFET, 110 A, 600 V HiperFET, Polar3, 3-Pin PLUS264 IXYS IXFB110N60P3特徴
仕様
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