64-0345-65 [Discontinued]NTZD5110NT1G Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 ON Semiconductor NTZD5110NT1G
Features
- Dual N-Channel MOSFET, ON Semiconductor
Spec
- Quantity:1bag(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:310 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:2.5 Ω
- Maximum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-6 V, +6 V
- Package Type:SOT-563
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:280 mW
- Typical Gate Charge @ Vgs:0.7 nC @ 4.5 V
- CODE No.:780-4802
| Order No. | 64-0345-65 | |
|---|---|---|
| Model No. | NTZD5110NT1G | |
| Standard price |
JPY: 1,710
USD: 10.64
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]NTZD5110NT1G Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 ON Semiconductor NTZD5110NT1G](https://aimg.as-1.co.jp/c/64/0345/65/64034544.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)