64-0341-09 [Discontinued]SIS406DN-T1-GE3 N-Channel MOSFET, 9 A, 30 V, 8-Pin PowerPAK 1212 Vishay SIS406DN-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:11 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.5 W
- Number of Elements per Chip:1
- CODE No.:165-2767
| Order No. | 64-0341-09 | |
|---|---|---|
| Model No. | SIS406DN-T1-GE3 | |
| Standard price |
JPY: 142,000
USD: 890.12
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SIS406DN-T1-GE3 N-Channel MOSFET, 9 A, 30 V, 8-Pin PowerPAK 1212 Vishay SIS406DN-T1-GE3](https://aimg.as-1.co.jp/c/64/0341/09/64034109.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)