64-0341-01 [Discontinued]SI4936CDY-T1-GE3 Dual N-Channel MOSFET, 5 A, 30 V, 8-Pin SOIC Vishay SI4936CDY-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:40 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.7 W
- Typical Turn-On Delay Time:12 ns
- CODE No.:165-2665
| Order No. | 64-0341-01 | |
|---|---|---|
| Model No. | SI4936CDY-T1-GE3 | |
| Standard price |
JPY: 112,000
USD: 696.86
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI4936CDY-T1-GE3 Dual N-Channel MOSFET, 5 A, 30 V, 8-Pin SOIC Vishay SI4936CDY-T1-GE3](https://aimg.as-1.co.jp/c/64/0341/01/64034101.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)