64-0340-99 ［Discontinued］SI4900DY-T1-GE3 Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:4.3 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:58 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Typical Turn-Off Delay Time:15 ns, 20 ns
- CODE No.:165-3003
| Order No. | 64-0340-99 | |
|---|---|---|
| Model No. | SI4900DY-T1-GE3 | |
| Standard price |
JPY: 305,000
USD: 1,897.71
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2500pieces) | |
|
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| Stock in Japan | - | |