64-0340-98 SI4162DY-T1-GE3 N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC Vishay SI4162DY-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:13.6 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:8 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Typical Turn-Off Delay Time:25 ns
- CODE No.:710-3323
| Order No. | 64-0340-98 | |
|---|---|---|
| Model No. | SI4162DY-T1-GE3 | |
| Standard price |
JPY: 1,440
USD: 9.03
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|