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64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
Vishay

64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

  • PrintPrintlass="init"> 64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
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    • 64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
    Vishay

    64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

    • 印刷
    • PDF
    • Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

    Features

    • N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

    仕様

    • Quantity:1bag(10pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:9.9 A
    • Maximum Drain Source Voltage:30 V
    • Maximum Drain Source Resistance:14 mΩ
    • Minimum Gate Threshold Voltage:1.2V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:SOIC
    • Mounting Type:Surface Mount
    • Transistor Configuration:Single
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:2.5 W
    • Typical Turn-Off Delay Time:13 ns, 14 ns
    • CODE No.:710-3320
    •  
    Order No. 64-0340-96
    型番 Si4134DY-T1-GE3
    標準価格 JPY: 1,490 USD: 9.34
    Excange rate 1USD= 159.53JPY
    Valid price in Japan
    QuantityQuantityass="init"> 64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • RS Components
    • 64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
    Vishay

    64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

    • 印刷
    • PDF
    • Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

    特徴

    • N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

    仕様

    • Quantity:1bag(10pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:9.9 A
    • Maximum Drain Source Voltage:30 V
    • Maximum Drain Source Resistance:14 mΩ
    • Minimum Gate Threshold Voltage:1.2V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:SOIC
    • Mounting Type:Surface Mount
    • Transistor Configuration:Single
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:2.5 W
    • Typical Turn-Off Delay Time:13 ns, 14 ns
    • CODE No.:710-3320
    •  
    アズワン品番 64-0340-96
    型番 Si4134DY-T1-GE3
    標準価格 JPY: 1,490 USD: 9.34
    Excange rate 1USD= 159.53JPY
    Valid price in Japan
    Quantity 1bag(10pieces)
    在庫数
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