64-0340-96 Si4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:14 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Typical Turn-Off Delay Time:13 ns, 14 ns
- CODE No.:710-3320
| Order No. | 64-0340-96 | |
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| Model No. | Si4134DY-T1-GE3 | |
| Standard price |
JPY: 1,490
USD: 9.34
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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