64-0340-95 SI4134DY-T1-GE3 N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay SI4134DY-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1bag(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:14 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Typical Gate Charge @ Vgs:15.4 nC @ 10 V, 7.3 nC @ 4.5 V
- CODE No.:165-2664
| Order No. | 64-0340-95 | |
|---|---|---|
| Model No. | SI4134DY-T1-GE3 | |
| Standard price |
JPY: 165,000
USD: 1,026.63
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2500pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|