64-0340-90 [Discontinued]SI4102DY-T1-GE3 N-Channel MOSFET, 2.7 A, 100 V, 8-Pin SOIC Vishay SI4102DY-T1-GE3
Features
- N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
Spec
- Quantity:1bag(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.7 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:158 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.4 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-2748
| Order No. | 64-0340-90 | |
|---|---|---|
| Model No. | SI4102DY-T1-GE3 | |
| Standard price |
JPY: 167,000
USD: 1,046.83
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI4102DY-T1-GE3 N-Channel MOSFET, 2.7 A, 100 V, 8-Pin SOIC Vishay SI4102DY-T1-GE3](https://aimg.as-1.co.jp/c/64/0340/90/64034090.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)