64-0340-88 SI2325DS-T1-E3 P-Channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23 Vishay SI2325DS-T1-E3
Features
- P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
Spec
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:530 mA
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:1.2 Ω
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23 (TO-236)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:750 mW
- Typical Gate Charge @ Vgs:7.7 nC @ 10 V
- CODE No.:710-3263
| Order No. | 64-0340-88 | |
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| Model No. | SI2325DS-T1-E3 | |
| Standard price |
JPY: 1,470
USD: 9.22
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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