64-0340-87 SI2303CDS-T1-GE3 P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Vishay SI2303CDS-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity:1bag(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:1.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:190 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1 W
- Maximum Operating Temperature:+150 °C
- CODE No.:146-1425
| Order No. | 64-0340-87 | |
|---|---|---|
| Model No. | SI2303CDS-T1-GE3 | |
| Standard price |
JPY: 166,000
USD: 1,040.56
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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