64-0251-20 [Discontinued]IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF
FeaturesFeatures class="init">
[Discontinued]IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF 64-0251-20 【AXEL GLOBAL】 アズワン
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Infineon
64-0251-20 [Discontinued]IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:150 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:4 mΩ
- Maximum Gate Threshold Voltage:2.3V
- Minimum Gate Threshold Voltage:1.4V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:140 W
- Typical Turn-Off Delay Time:21 ns
- CODE No.:688-7193
-
Order No.Order No.ss="init">
[Discontinued]IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF 64-0251-20 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-0251-20 [Discontinued]IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:150 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:4 mΩ
- Maximum Gate Threshold Voltage:2.3V
- Minimum Gate Threshold Voltage:1.4V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:140 W
- Typical Turn-Off Delay Time:21 ns
- CODE No.:688-7193
-
アズワン品番
64-0251-20
Model No.
IRL7833PBF
標準価格
JPY: 950
USD: 5.96
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(2pieces)
Stock in Japan
-
64-0251-20 [Discontinued]IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:150 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:4 mΩ
- Maximum Gate Threshold Voltage:2.3V
- Minimum Gate Threshold Voltage:1.4V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:140 W
- Typical Turn-Off Delay Time:21 ns
- CODE No.:688-7193
Order No.Order No.ss="init">
64-0251-20 [Discontinued]IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF特徴
仕様
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![[Discontinued]IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF](https://aimg.as-1.co.jp/c/64/0251/20/64025119.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)