64-0251-19 ［Discontinued］IRL7833PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRL7833PBF
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1bag(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:150 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:4 mΩ
- Maximum Gate Threshold Voltage:2.3V
- Minimum Gate Threshold Voltage:1.4V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:140 W
- Typical Gate Charge @ Vgs:32 nC @ 4.5 V
- CODE No.:165-7618
| アズワン品番 | 64-0251-19 | |
|---|---|---|
| 型番 | IRL7833PBF | |
| 標準価格 |
JPY: 8,370
USD: 52.50
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| 入り数 | 1bag(50pieces) | |
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| 在庫数 | - | |