64-0190-29 [Discontinued]FQP7N80C N-Channel MOSFET, 6.6 A, 800 V QFET, 3-Pin TO-220AB ON Semiconductor FQP7N80C
Features
- QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6.6 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:1.9 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:167 W
- Maximum Operating Temperature:+150 °C
- CODE No.:671-5180
| Order No. | 64-0190-29 | |
|---|---|---|
| Model No. | FQP7N80C | |
| Standard price |
JPY: 1,360
USD: 8.53
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FQP7N80C N-Channel MOSFET, 6.6 A, 800 V QFET, 3-Pin TO-220AB ON Semiconductor FQP7N80C](https://aimg.as-1.co.jp/c/64/0190/29/64019028.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)