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ON Semiconductor

64-0190-20　FQP6N80C N-Channel MOSFET, 5.5 A, 800 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP6N80C

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1bag(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:5.5 A
  • Maximum Drain Source Voltage:800 V
  • Maximum Drain Source Resistance:2.5 Ω
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:158 W
  • Number of Elements per Chip:1
  • CODE No.:146-1971
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Order No. 64-0190-20
Model No. FQP6N80C
Standard price JPY: 14,200 USD: 89.01
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(50pieces)
Stock in Japan
Supplier Stock

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