64-0190-18 [Discontinued]FQP65N06 N-Channel MOSFET, 65 A, 60 V QFET, 3-Pin TO-220AB ON Semiconductor FQP65N06
Features
- QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:65 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:16 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-5371
| Order No. | 64-0190-18 | |
|---|---|---|
| Model No. | FQP65N06 | |
| Standard price |
JPY: 10,790
USD: 67.64
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(50pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]FQP65N06 N-Channel MOSFET, 65 A, 60 V QFET, 3-Pin TO-220AB ON Semiconductor FQP65N06](https://aimg.as-1.co.jp/c/64/0190/18/64019018.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)