ON Semiconductor

64-0190-12　［Discontinued］FQP44N10 N-Channel MOSFET, 43 A, 100 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP44N10

印刷

特徴

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:43 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:39 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-25 V, +25 V
Package Type:TO-220AB
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:146 W
Typical Turn-Off Delay Time:90 ns
CODE No.:671-5111

Order No. 64-0190-12

型番 FQP44N10

標準価格

JPY: 950 USD: 5.96

Excange rate 1USD= 159.42JPY
Valid price in Japan

QuantityQuantityass="init"> ［Discontinued］FQP44N10 N-Channel MOSFET, 43 A, 100 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP44N10 64-0190-12 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

ON Semiconductor

64-0190-12　［Discontinued］FQP44N10 N-Channel MOSFET, 43 A, 100 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP44N10

印刷

特徴

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:43 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:39 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-25 V, +25 V
Package Type:TO-220AB
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:146 W
Typical Turn-Off Delay Time:90 ns
CODE No.:671-5111

アズワン品番	64-0190-12
型番	FQP44N10
標準価格	JPY: 950 USD: 5.96 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1bag(5pieces)

在庫数	-

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How to use

User’s GuideASONEs="init"> ［Discontinued］FQP44N10 N-Channel MOSFET, 43 A, 100 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP44N10 64-0190-12 【AXEL GLOBAL】 アズワン

Listed products : 3 milion products

How to use

Quote Other Requests

ON Semiconductor

64-0190-12　［Discontinued］FQP44N10 N-Channel MOSFET, 43 A, 100 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP44N10

Features

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:43 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:39 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-25 V, +25 V
Package Type:TO-220AB
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:146 W
Typical Turn-Off Delay Time:90 ns
CODE No.:671-5111

Order No.	64-0190-12
Model No.	FQP44N10
Standard price	JPY: 950 USD: 5.96 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1bag(5pieces)

Stock in Japan	-