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ON Semiconductor

64-0190-10　［Discontinued］FQP3N80C N-Channel MOSFET, 3 A, 800 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP3N80C

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:3 A
  • Maximum Drain Source Voltage:800 V
  • Maximum Drain Source Resistance:4.8 Ω
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:107 W
  • Typical Turn-Off Delay Time:22.5 ns
  • CODE No.:671-5109
  •  
Order No. 64-0190-10
Model No. FQP3N80C
Standard price JPY: 750 USD: 4.70
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -

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