64-0189-88 ［Discontinued］ON Semiconductor NGTG12N60TF1G IGBT, 88 (Pulse) A 600 V, 3-Pin TO-3PF NGTG12N60TF1G
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(5pieces)
- Maximum Continuous Collector Current:88 (Pulse) A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:54 W
- Package Type:TO-3PF
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:15.5mm
- Width:5.5mm
- Height:26.5mm
- Dimensions:15.5 x 5.5 x 26.5mm
- Maximum Operating Temperature:+150 °C
- CODE No.:801-6801
| Order No. | 64-0189-88 | |
|---|---|---|
| Model No. | NGTG12N60TF1G | |
| Standard price |
JPY: 1,260
USD: 7.90
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |