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ON Semiconductor

64-0189-28　FDP51N25 N-Channel MOSFET, 51 A, 250 V UniFET, 3-Pin TO-220AB ON Semiconductor　FDP51N25

Features

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:51 A
  • Maximum Drain Source Voltage:250 V
  • Maximum Drain Source Resistance:60 mΩ
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:320 W
  • Typical Turn-Off Delay Time:98 ns
  • CODE No.:671-4843
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Order No. 64-0189-28
Model No. FDP51N25
Standard price JPY: 3,120 USD: 19.41
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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