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ON Semiconductor

64-0188-68　NDS352AP P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 ON Semiconductor　NDS352AP

Features

  • Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:. Voltage controlled P-Channel small signal switch High-Density cell design High saturation current Superior switching Great rugged and reliable performance DMOS technology. Applications:. Load Switching DC/DC converter Battery protection Power management control DC motor control

Spec

  • Quantity:1bag(10pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:900 mA
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:300 mΩ
  • Minimum Gate Threshold Voltage:0.8V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:500 mW
  • Typical Turn-Off Delay Time:35 ns
  • CODE No.:671-1084
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Order No. 64-0188-68
Model No. NDS352AP
Standard price JPY: 930 USD: 5.83
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(10pieces)
Stock in Japan
Supplier Stock

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