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ON Semiconductor

64-0188-65　NDS331N N-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 ON Semiconductor　NDS331N

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1bag(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:1.3 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:160 mΩ
  • Minimum Gate Threshold Voltage:0.5V
  • Maximum Gate Source Voltage:+8 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:500 mW
  • Minimum Operating Temperature:-55 °C
  • CODE No.:166-1810
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Order No. 64-0188-65
Model No. NDS331N
Standard price JPY: 97,200 USD: 604.78
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(3000pieces)
Stock in Japan
Supplier Stock

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