64-0188-62 NDS0605 P-Channel MOSFET, 180 mA, 60 V, 3-Pin SOT-23 ON Semiconductor NDS0605
Features
- Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:. Voltage controlled P-Channel small signal switch High-Density cell design High saturation current Superior switching Great rugged and reliable performance DMOS technology. Applications:. Load Switching DC/DC converter Battery protection Power management control DC motor control
Spec
- Quantity:1bag(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:180 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:5 Ω
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:360 mW
- Typical Gate Charge @ Vgs:1.8 nC @ 10 V
- CODE No.:166-2668
| Order No. | 64-0188-62 | |
|---|---|---|
| Model No. | NDS0605 | |
| Standard price |
JPY: 39,400
USD: 246.98
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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